Huawei has filed an unexpected patent application for the production of next-generation 2 nm chips, showcasing its determination to advance semiconductor manufacturing despite sanctions. The patent reveals Huawei’s plan to achieve this milestone solely using DUV lithography equipment and working within the limitations imposed by restricted access to EUV machines.
📌 Key Takeaways
- ✓Huawei patents new 2 nm chip process
- ✓Uses only DUV lithography equipment
- ✓Aims to reduce external dependencies
- ✓Plans transition from N+3 to 2 nm node
New Chip Manufacturing Approach
The document outlines an advanced multi-pattern technique that could help Huawei and its production partner SMIC reach a 21 nm metal pitch, which is equivalent to TSMC and Samsung’s current 2 nm processes based on EUV technology. The company’s strategy centers around an optimized “Self-Aligned Quadruple Patterning” process, reducing the number of DUV exposures by up to four times compared to conventional methods.
Goals and Challenges
This simplified approach aims to enable SMIC to transition directly from its N+3 process used in Kirin 9030 to a new 2 nm node without relying on EUV tools. However, industry experts caution that while such aggressive patterning may be feasible in laboratory settings, it might face practical challenges like reduced yield rates and higher costs in large-scale production.
Despite these hurdles, if Huawei can achieve high-volume manufacturing with its SAQP-based approach, this could mark a significant technological advancement in response to the sanctions. The patent clearly demonstrates Huawei’s commitment to reducing external dependencies and bolstering China’s semiconductor industry capability.
